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作者 Sher, Alvin H.

標題 Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes / A.H. Sher ; sponsored by U.S. Atomic Energy Commission.

出版資料 Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1975.

複本

說明 iv, 20 p. : ill. ; 26 cm.
系列 Semiconductor measurement technology
National Bureau of Standards special publication ; 400-13
NBS special publication ; 400-13.
With: Bound With: A BASIC program for calculating dopant density profiles from capacitance-voltage data / Richard L. Mattis and Martin G. Buehler.
Bibliography Includes bibliographical references.
主題 Germanium diodes -- Defects.
Silicon diodes -- Defects.
Infrared technology.
添加作者 U.S. Atomic Energy Commission.
政府出版物號碼 C 13.10:400-13