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Auteur Français Buehler, Martin G.

Titre Defects in PN junctions and MOS capacitors observed using thermally stimulated current and capacitance measurements, videotape script / Martin G. Buehler.

Adresse Bibliographique Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1976.

Exemplaires

Description iii, 14 p. : ill. ; 26 cm.
Collection Semiconductor measurement technology
NBS special publication ; 400-26
NBS special publication ; 400-26.
With: Bound With: Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon /
Bibliography Includes bibliographical references (p. 14).
Sujet Semiconductors -- Junctions -- Defects.
Capacitors -- Defects.
Cryostats.
Electric measurements.
No Doc. Officiel C 13.10:400-26