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Auteur Français

Titre Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes / A.H. Sher ; sponsored by U.S. Atomic Energy Commission.

Adresse Bibliographique

Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off., 1975.

Description	iv, 20 p. : ill. ; 26 cm.
Collection	Semiconductor measurement technology
	National Bureau of Standards special publication ; 400-13
	NBS special publication ; 400-13.
With:	Bound With: A BASIC program for calculating dopant density profiles from capacitance-voltage data / Richard L. Mattis and Martin G. Buehler.
Bibliography	Includes bibliographical references.
Sujet	Germanium diodes -- Defects.
	Silicon diodes -- Defects.
	Infrared technology.
Autre Auteur	U.S. Atomic Energy Commission.
No Doc. Officiel	C 13.10:400-13